IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Collector- Emitter Voltage VCEO Max | 600 V |
Packaging | Tube |
Maximum Operating Temperature | + 100 C |
Gate-Emitter Leakage Current | 800 nA |
Collector-Emitter Saturation Voltage | 1.5 V |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Continuous Collector Current at 25 C | 400 A |
Pd - Power Dissipation | 935 W |