IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Collector-Emitter Saturation Voltage | 2 V |
Maximum Operating Temperature | + 100 C |
Continuous Collector Current at 25 C | 400 A |
Minimum Operating Temperature | - 40 C |
Gate-Emitter Leakage Current | 600 nA |
Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 1.7 kV |
Pd - Power Dissipation | 1.66 kW |
Product | IGBT Silicon Modules |
Packaging | Tube |