IGBT Modules PM-IGBT-TFS-D3
Products specifications
Continuous Collector Current at 25 C | 440 A |
Maximum Operating Temperature | + 125 C |
Packaging | Bulk |
Configuration | Dual |
Collector-Emitter Saturation Voltage | 1.7 V |
Product | IGBT Silicon Modules |
Pd - Power Dissipation | 1.45 kW |
Minimum Operating Temperature | - 40 C |
Gate-Emitter Leakage Current | 400 nA |
Collector- Emitter Voltage VCEO Max | 1.2 kV |