IGBT Modules PM-IGBT-TFS-SP3
Products specifications
Product | IGBT Silicon Modules |
Gate-Emitter Leakage Current | 400 nA |
Collector-Emitter Saturation Voltage | 1.7 V |
Continuous Collector Current at 25 C | 40 A |
Configuration | 3-Phase |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 100 C |
Packaging | Tube |
Pd - Power Dissipation | 156 W |
Collector- Emitter Voltage VCEO Max | 1.2 kV |