IGBT Modules PM-IGBT-TFS-SP3
Products specifications
Gate-Emitter Leakage Current | 400 nA |
Product | IGBT Silicon Modules |
Configuration | Single |
Minimum Operating Temperature | - 40 C |
Packaging | Tube |
Pd - Power Dissipation | 750 W |
Maximum Operating Temperature | + 100 C |
Collector-Emitter Saturation Voltage | 1.5 V |
Collector- Emitter Voltage VCEO Max | 600 V |
Continuous Collector Current at 25 C | 290 A |