IGBT Modules PM-IGBT-TFS-D3
Products specifications
Minimum Operating Temperature | - 40 C |
Packaging | Bulk |
Maximum Operating Temperature | + 125 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Pd - Power Dissipation | 1.05 kW |
Collector-Emitter Saturation Voltage | 1.7 V |
Continuous Collector Current at 25 C | 300 A |
Configuration | Single |
Gate-Emitter Leakage Current | 400 nA |
Product | IGBT Silicon Modules |