IGBT Modules PM-IGBT-TFS-D3
Products specifications
Gate-Emitter Leakage Current | 400 nA |
Collector-Emitter Saturation Voltage | 2 V |
Continuous Collector Current at 25 C | 310 A |
Product | IGBT Silicon Modules |
Configuration | Dual |
Maximum Operating Temperature | + 125 C |
Collector- Emitter Voltage VCEO Max | 1.7 kV |
Pd - Power Dissipation | 1.25 kW |
Minimum Operating Temperature | - 40 C |
Packaging | Bulk |