IGBT Modules PM-IGBT-TFS-SP6C
Lead Time: 259 Days
Products specifications
Product | IGBT Silicon Modules |
Gate-Emitter Leakage Current | 500 nA |
Continuous Collector Current at 25 C | 280 A |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 1.7 V |
Maximum Operating Temperature | + 100 C |
Packaging | Tube |
Pd - Power Dissipation | 890 W |
Minimum Operating Temperature | - 40 C |
Configuration | Dual |