IGBT Modules PM-IGBT-TFS-D3
Products specifications
Pd - Power Dissipation | 1.05 kW |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Gate-Emitter Leakage Current | 400 nA |
Packaging | Bulk |
Continuous Collector Current at 25 C | 300 A |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Configuration | Dual |
Collector-Emitter Saturation Voltage | 1.7 V |
Maximum Operating Temperature | + 125 C |