IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Pd - Power Dissipation | 890 W |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.7 kV |
Collector-Emitter Saturation Voltage | 2 V |
Maximum Operating Temperature | + 100 C |
Gate-Emitter Leakage Current | 600 nA |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Packaging | Tube |
Continuous Collector Current at 25 C | 250 A |