IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Packaging | Tube |
Maximum Operating Temperature | + 100 C |
Collector-Emitter Saturation Voltage | 1.7 V |
Product | IGBT Silicon Modules |
Pd - Power Dissipation | 690 W |
Gate-Emitter Leakage Current | 400 nA |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Continuous Collector Current at 25 C | 220 A |
Configuration | Single |
Minimum Operating Temperature | - 40 C |