IGBT Modules Power Module - IGBT
Products specifications
Configuration | Full Bridge |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 890 W |
Collector-Emitter Saturation Voltage | 2 V |
Continuous Collector Current at 25 C | 250 A |
Gate-Emitter Leakage Current | 600 nA |
Packaging | Tube |
Maximum Operating Temperature | + 100 C |
Product | IGBT Silicon Modules |
Collector- Emitter Voltage VCEO Max | 1.7 kV |