IGBT Modules PM-IGBT-TFS-SP1
Products specifications
Pd - Power Dissipation | 480 W |
Configuration | Dual |
Gate-Emitter Leakage Current | 400 nA |
Maximum Operating Temperature | + 100 C |
Continuous Collector Current at 25 C | 225 A |
Collector-Emitter Saturation Voltage | 1.5 V |
Minimum Operating Temperature | - 40 C |
Product | IGBT Silicon Modules |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 600 V |