IGBT Modules PM-IGBT-TFS-SP4
Products specifications
Configuration | Dual |
Maximum Operating Temperature | + 125 C |
Packaging | Tube |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 1.7 V |
Pd - Power Dissipation | 690 W |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Gate-Emitter Leakage Current | 400 nA |
Continuous Collector Current at 25 C | 220 A |
Minimum Operating Temperature | - 40 C |