IGBT Modules PM-IGBT-TFS-SP3
Products specifications
Configuration | Dual |
Minimum Operating Temperature | - 40 C |
Collector-Emitter Saturation Voltage | 1.7 V |
Maximum Operating Temperature | + 100 C |
Pd - Power Dissipation | 833 W |
Product | IGBT Silicon Modules |
Continuous Collector Current at 25 C | 220 A |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Gate-Emitter Leakage Current | 400 nA |