IGBT Modules PM-IGBT-TFS-SP3F
Lead Time: 259 Days
Products specifications
Maximum Operating Temperature | + 175 C |
Gate-Emitter Leakage Current | 400 nA |
Collector-Emitter Saturation Voltage | 1.5 V |
Continuous Collector Current at 25 C | 150 A |
Collector- Emitter Voltage VCEO Max | 600 V |
Product | IGBT Silicon Modules |
Packaging | Tube |
Pd - Power Dissipation | 340 W |
Minimum Operating Temperature | - 40 C |
Configuration | Quad |