IGBT Modules PM-IGBT-TFS-SP1
Products specifications
Gate-Emitter Leakage Current | 400 nA |
Collector- Emitter Voltage VCEO Max | 600 V |
Maximum Operating Temperature | + 100 C |
Configuration | Dual |
Continuous Collector Current at 25 C | 150 A |
Collector-Emitter Saturation Voltage | 1.5 V |
Pd - Power Dissipation | 340 W |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Packaging | Tube |