IGBT Modules PM-IGBT-TFS-SP1
Products specifications
Collector- Emitter Voltage VCEO Max | 650 V |
Packaging | Tube |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 100 C |
Collector-Emitter Saturation Voltage | 1.85 V |
Configuration | Full Bridge |
Pd - Power Dissipation | 250 W |
Gate-Emitter Leakage Current | 200 nA |
Continuous Collector Current at 25 C | 100 A |