IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
Maximum Operating Temperature | + 100 C |
Collector-Emitter Saturation Voltage | 2.05 V |
Configuration | Full Bridge |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Minimum Operating Temperature | - 40 C |
Gate-Emitter Leakage Current | 150 nA |
Product | IGBT Silicon Modules |
Continuous Collector Current at 25 C | 130 A |
Pd - Power Dissipation | 385 W |