IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Maximum Operating Temperature | + 100 C |
Product | IGBT Silicon Modules |
Pd - Power Dissipation | 2 kW |
Collector- Emitter Voltage VCEO Max | 650 V |
Packaging | Tube |
Continuous Collector Current at 25 C | 770 A |
Minimum Operating Temperature | - 40 C |
Gate-Emitter Leakage Current | 1 uA |
Configuration | Dual |
Collector-Emitter Saturation Voltage | 1.85 V |