IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
Collector-Emitter Saturation Voltage | 1.85 V |
Maximum Operating Temperature | + 125 C |
Pd - Power Dissipation | 175 W |
Packaging | Tube |
Technology | - |
Configuration | Dual |
Product | IGBT Silicon Modules |
Gate-Emitter Leakage Current | 150 nA |
Continuous Collector Current at 25 C | 70 A |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 650 V |