IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Collector-Emitter Saturation Voltage | 2.05 V |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 1.9 kW |
Continuous Collector Current at 25 C | 625 A |
Configuration | Dual |
Gate-Emitter Leakage Current | 680 nA |
Product | IGBT Silicon Modules |
Packaging | Tube |
Maximum Operating Temperature | + 100 C |