IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
Packaging | Tube |
Collector-Emitter Saturation Voltage | 1.95 V |
Maximum Operating Temperature | + 125 C |
Collector- Emitter Voltage VCEO Max | 650 V |
Technology | - |
Gate-Emitter Leakage Current | 300 nA |
Configuration | Quad |
Pd - Power Dissipation | 95 W |
Minimum Operating Temperature | - 40 C |
Product | IGBT Silicon Modules |
Continuous Collector Current at 25 C | 40 A |