IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Gate-Emitter Leakage Current | 500 nA |
Collector- Emitter Voltage VCEO Max | 650 V |
Packaging | Tube |
Maximum Operating Temperature | + 100 C |
Product | IGBT Silicon Modules |
Configuration | Full Bridge |
Continuous Collector Current at 25 C | 385 A |
Pd - Power Dissipation | 1 kW |
Collector-Emitter Saturation Voltage | 1.85 V |
Minimum Operating Temperature | - 40 C |