IGBT Modules PM-IGBT-TFS-SP1
Lead Time: 259 Days
Products specifications
Packaging | Tube |
Maximum Operating Temperature | + 125 C |
Pd - Power Dissipation | 165 W |
Continuous Collector Current at 25 C | 50 A |
Collector- Emitter Voltage VCEO Max | 1200 V |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 2.05 V |
Technology | - |
Gate-Emitter Leakage Current | 150 nA |
Configuration | Quad |
Minimum Operating Temperature | - 40 C |