IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Collector-Emitter Saturation Voltage | 2.05 V, 1.5 V |
Gate-Emitter Leakage Current | 480 nA, 400 nA |
Product | IGBT Silicon Modules |
Collector- Emitter Voltage VCEO Max | 1.2 kV, 600 V |
Maximum Operating Temperature | + 100 C |
Minimum Operating Temperature | - 40 C |
Configuration | Dual Common Emitter |
Packaging | Tube |
Continuous Collector Current at 25 C | 300 A, 150 A |
Pd - Power Dissipation | 1 kW, 340 W |