IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 680 W |
Collector- Emitter Voltage VCEO Max | 650 V |
Collector-Emitter Saturation Voltage | 1.85 V |
Technology | - |
Maximum Operating Temperature | + 125 C |
Packaging | Tube |
Configuration | Quad |
Continuous Collector Current at 25 C | 270 A |
Gate-Emitter Leakage Current | 300 nA |