IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
Packaging | Tube |
Maximum Operating Temperature | + 100 C |
Product | IGBT Silicon Modules |
Continuous Collector Current at 25 C | 350 A |
Gate-Emitter Leakage Current | 340 nA |
Collector-Emitter Saturation Voltage | 2.05 V |
Pd - Power Dissipation | 1 kW |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Minimum Operating Temperature | - 40 C |
Configuration | Full Bridge |