IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
Packaging | Tube |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 40 C |
Technology | - |
Collector- Emitter Voltage VCEO Max | 1200 V |
Collector-Emitter Saturation Voltage | 2.05 V |
Gate-Emitter Leakage Current | 480 nA |
Pd - Power Dissipation | 1250 W |
Configuration | Dual |
Continuous Collector Current at 25 C | 400 A |
Maximum Operating Temperature | + 125 C |