IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
Gate-Emitter Leakage Current | 150 nA |
Collector- Emitter Voltage VCEO Max | 650 V |
Maximum Operating Temperature | + 125 C |
Collector-Emitter Saturation Voltage | 1.85 V |
Configuration | Quad |
Packaging | Tube |
Continuous Collector Current at 25 C | 135 A |
Minimum Operating Temperature | - 40 C |
Technology | - |
Pd - Power Dissipation | 350 W |
Product | IGBT Silicon Modules |