IGBT Modules PM-IGBT-TFS-SP1
Products specifications
Product | IGBT Silicon Modules |
Technology | - |
Packaging | Tube |
Configuration | Single |
Pd - Power Dissipation | 520 W |
Collector-Emitter Saturation Voltage | 2.05 V |
Collector- Emitter Voltage VCEO Max | 1200 V |
Continuous Collector Current at 25 C | 170 A |
Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 125 C |
Gate-Emitter Leakage Current | 150 nA |