IGBT Modules PM-IGBT-TFS-SP1
Products specifications
Product | IGBT Silicon Modules |
Packaging | Tube |
Continuous Collector Current at 25 C | 135 A |
Minimum Operating Temperature | - 40 C |
Collector- Emitter Voltage VCEO Max | 650 V |
Gate-Emitter Leakage Current | 150 nA |
Pd - Power Dissipation | 350 W |
Maximum Operating Temperature | + 125 C |
Collector-Emitter Saturation Voltage | 1.85 V |
Configuration | Dual |