IGBT Modules PM-IGBT-TFS-SP1
Products specifications
Maximum Operating Temperature | + 100 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Continuous Collector Current at 25 C | 110 A |
Minimum Operating Temperature | - 40 C |
Packaging | Tube |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 1.85 V |
Gate-Emitter Leakage Current | 600 nA |
Configuration | Dual |
Pd - Power Dissipation | 385 W |