IGBT Modules PM-IGBT-TFS-D3
Products specifications
Product | IGBT Silicon Modules |
Packaging | Bulk |
Gate-Emitter Leakage Current | 800 nA |
Collector-Emitter Saturation Voltage | 1.8 V |
Maximum Operating Temperature | + 125 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Minimum Operating Temperature | - 40 C |
Pd - Power Dissipation | 3 kW |
Configuration | Single |
Continuous Collector Current at 25 C | 840 A |