IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
Pd - Power Dissipation | 280 W |
Product | IGBT Silicon Modules |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Packaging | Tube |
Minimum Operating Temperature | - 40 C |
Gate-Emitter Leakage Current | 400 nA |
Continuous Collector Current at 25 C | 80 A |
Collector-Emitter Saturation Voltage | 1.8 V |
Maximum Operating Temperature | + 100 C |