IGBT Modules PM-IGBT-TFS-SP6P
Products specifications
Minimum Operating Temperature | - 40 C |
Packaging | Tube |
Collector-Emitter Saturation Voltage | 1.8 V |
Continuous Collector Current at 25 C | 140 A |
Pd - Power Dissipation | 517 W |
Product | IGBT Silicon Modules |
Configuration | 3-Phase |
Gate-Emitter Leakage Current | 600 nA |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Maximum Operating Temperature | + 100 C |