IGBT Modules PM-MOSFET-COOLMOS-SBD-SP1
Products specifications
Continuous Collector Current at 25 C | 80 A |
Maximum Operating Temperature | + 100 C |
Pd - Power Dissipation | 176 W |
Gate-Emitter Leakage Current | 600 nA |
Minimum Operating Temperature | - 40 C |
Collector-Emitter Saturation Voltage | 1.5 V |
Packaging | Tube |
Configuration | Full Bridge |
Product | IGBT Silicon Modules |
Collector- Emitter Voltage VCEO Max | 600 V |