IGBTs IGBT MOS 8 1200 V 85 A TO-264
Products specifications
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Configuration | Single |
Pd - Power Dissipation | 962 W |
Continuous Collector Current at 25 C | 170 A |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 3.5 V |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |