IGBTs IGBT MOS 8 1200 V 85 A TO-247 MAX
Products specifications
Configuration | Single |
Collector-Emitter Saturation Voltage | 3.5 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Pd - Power Dissipation | 962 W |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Continuous Collector Current at 25 C | 170 A |
Product | IGBT Silicon Modules |