IGBT Modules IGBT PT MOS 7 Single 600 V 80 A TO-247 MAX
Products specifications
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 55 C |
Continuous Collector Current at 25 C | 100 A |
Collector-Emitter Saturation Voltage | 2.2 V |
Packaging | Tube |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 1.041 kW |
Collector- Emitter Voltage VCEO Max | 600 V |