IGBT Transistors IGBT PT MOS 8 Single 600 V 80 A TO-247
Products specifications
Collector-Emitter Saturation Voltage | 2 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Packaging | Tube |
Maximum Gate Emitter Voltage | 30 V |
Mounting Style | Through Hole |
Pd - Power Dissipation | 625 W |
Collector- Emitter Voltage VCEO Max | 600 V |
Technology | Si |
Continuous Collector Current at 25 C | 143 A |