IGBT Modules PM-IGBT-TFS-SOT227
Lead Time: 259 Days
Products specifications
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Continuous Collector Current at 25 C | 100 A |
Collector-Emitter Saturation Voltage | 1.7 V |
Maximum Operating Temperature | + 150 C |
Product | IGBT Silicon Modules |
Gate-Emitter Leakage Current | 500 nA |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Pd - Power Dissipation | 416 W |
Configuration | Single |