IGBT Modules IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
Lead Time: 0 Days
Products specifications
Gate-Emitter Leakage Current | 100 nA |
Packaging | Tube |
Continuous Collector Current at 25 C | 128 A |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Pd - Power Dissipation | 543 W |
Collector-Emitter Saturation Voltage | 3.3 V |