IGBT Modules IGBT PT MOS 7 Single 1200 V 75 A SOT-227
Lead Time: 322 Days
Products specifications
Packaging | Tube |
Maximum Operating Temperature | + 150 C |
Continuous Collector Current at 25 C | 128 A |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 543 W |
Product | IGBT Silicon Modules |
Gate-Emitter Leakage Current | 100 nA |
Collector-Emitter Saturation Voltage | 3.3 V |
Collector- Emitter Voltage VCEO Max | 1.2 kV |