IGBTs IGBT PT MOS 7 Single 1200 V 75 A TO-247 MAX
Lead Time: 498 Days
Products specifications
Maximum Gate Emitter Voltage | 30 V |
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Pd - Power Dissipation | 1.042 kW |
Mounting Style | Through Hole |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Continuous Collector Current at 25 C | 100 A |
Collector-Emitter Saturation Voltage | 3.3 V |