IGBTs IGBT PT MOS 8 Combi 900 V 64 A TO-264
Products specifications
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 150 C |
Packaging | Tube |
Collector- Emitter Voltage VCEO Max | 900 V |
Maximum Gate Emitter Voltage | 30 V |
Continuous Collector Current at 25 C | 117 A |
Configuration | Single |
Technology | Si |
Pd - Power Dissipation | 500 W |
Collector-Emitter Saturation Voltage | 2.5 V |