IGBT Modules IGBT PT MOS 8 Combi 600 V 60 A SOT-227
Lead Time: 0 Days
Products specifications
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 356 W |
Gate-Emitter Leakage Current | 100 nA |
Continuous Collector Current at 25 C | 112 A |
Collector- Emitter Voltage VCEO Max | 600 V |
Product | IGBT Silicon Modules |
Minimum Operating Temperature | - 55 C |
Collector-Emitter Saturation Voltage | 2 V |
Packaging | Tube |