IGBT Modules PM-IGBT-TFS-SOT227
Products specifications
Minimum Operating Temperature | - 55 C |
Packaging | Tube |
Technology | - |
Collector- Emitter Voltage VCEO Max | 650 V |
Product | IGBT Silicon Modules |
Maximum Operating Temperature | + 150 C |
Gate-Emitter Leakage Current | 150 nA |
Continuous Collector Current at 25 C | 80 A |
Pd - Power Dissipation | 220 W |
Collector-Emitter Saturation Voltage | 1.85 V |
Configuration | Single |