IGBT Modules IGBT NPT Low Frequency Combi 1200 V 50 A SOT-227
Products specifications
Collector- Emitter Voltage VCEO Max | 1.2 kV |
Product | IGBT Silicon Modules |
Collector-Emitter Saturation Voltage | 2.5 V |
Gate-Emitter Leakage Current | 100 nA |
Packaging | Tube |
Pd - Power Dissipation | 521 W |
Maximum Operating Temperature | + 150 C |
Continuous Collector Current at 25 C | 120 A |
Minimum Operating Temperature | - 55 C |