IGBT Modules IGBT PT MOS 8 Combi 900 V 46 A SOT-227
Products specifications
Product | IGBT Silicon Modules |
Packaging | Tube |
Collector-Emitter Saturation Voltage | 2.5 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 284 W |
Collector- Emitter Voltage VCEO Max | 900 V |
Continuous Collector Current at 25 C | 87 A |
Gate-Emitter Leakage Current | 100 nA |
Minimum Operating Temperature | - 55 C |